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HIGH ETCH RATE CAPABILITY
The Hollow Cathode Discharge (HCD) plasma source creates a small volume / high density plasma for fast and clean etching:
SiO2 (200 nm/min), Si3N4 (500 nm/min), and polymers (2000 nm/min), without metal erosion
LOW COST OF OWNERSHIP
Small footprint (0.81 m2) system with direct manual loading
Low maintenance requirements
ETCH PROFILE CONTROL
Wide process pressure operating range (from 30 mT to 100 mT) enables profile control and high anisotropic or isotropic etch rates
FLEXIBILITY
A range of adaptors conveniently accommodates a variety of sample shapes and sizes for use with the cathode, with no need to replace parts[/vc_column_text][vc_empty_space][/vc_column][/vc_row][vc_row][vc_column][vc_custom_heading text=”Related processes” google_fonts=”font_family:Actor:regular|font_style:400 regular:400:normal”][vc_empty_space height=”15px”][vc_column_text]
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Anisotropic silicon nitride (Si3N4) removal on die
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14604″][vc_empty_space height=”10px”][vc_column_text]Nitride deprocessing
- Selectivity vs. mask > 50:1
- Etch rate 500 nm/min
- Roughness < 5
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Isotropic silicon nitride (Si3N4) removal on die
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14605″][vc_empty_space height=”10px”][vc_column_text]Nitride deprocessing
- Selectivity vs. mask > 50:1
- Etch rate 700 nm/min
- Roughness < 5
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Isotropic polyimide removal on die
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14606″][vc_empty_space height=”10px”][vc_column_text]Polyimide deprocessing
- Etch depth 5000 nm
- Etch rate 1500 nm/min
- Roughness < 5
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Anisotropic silicon dioxide (SiO2) removal on die
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14607″][vc_empty_space height=”10px”][vc_column_text]Oxide deprocessing
- Selectivity vs. mask > 50:1
- Etch rate 250 nm/min
- Roughness < 10
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