Corial Plasma Therm – Corial 200FA RIE Etch system

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The Corial 200FA combines the advantages of high rates with low cost of ownership for IC failure analysis applications….

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The Corial 200FA combines the advantages of high rates with low cost of ownership for IC failure analysis applications.

This equipment is installed in major fabs worldwide and features simple, direct loading of packaged dies, and dies up to 10×10 mm.

The Corial 200FA RIE plasma etcher uses an ultra-high-density plasma source and is designed for etching polymers and dielectrics.

The cathode design (Hollow Cathode Discharge principle) creates a small plasma volume of only a few cubic centimeters. It is well suited for die and packaged die deprocessing for IC failure analysis.

Key Benefits

HIGH ETCH RATE CAPABILITY

The Hollow Cathode Discharge (HCD) plasma source creates a small volume / high density plasma for fast and clean etching:
SiO2 (200 nm/min), Si3N4 (500 nm/min), and polymers (2000 nm/min), without metal erosion

LOW COST OF OWNERSHIP

Small footprint (0.81 m2) system with direct manual loading

Low maintenance requirements

ETCH PROFILE CONTROL

Wide process pressure operating range (from 30 mT to 100 mT) enables profile control and high anisotropic or isotropic etch rates

FLEXIBILITY

A range of adaptors conveniently accommodates a variety of sample shapes and sizes for use with the cathode, with no need to replace parts

Related processes

Typical applications served by the Corial 200FA for IC failure analysis include:
  • Isotropic polyimide removal
  • Isotropic & anisotropic nitride removal
  • Isotropic & anisotropic oxide removal
Anisotropic silicon nitride (Si3N4) removal on die

Nitride deprocessing

  • Selectivity vs. mask > 50:1
  • Etch rate 500 nm/min
  • Roughness < 5
Isotropic silicon nitride (Si3N4) removal on die

Nitride deprocessing

  • Selectivity vs. mask > 50:1
  • Etch rate 700 nm/min
  • Roughness < 5
Isotropic polyimide removal on die

Polyimide deprocessing

  • Etch depth 5000 nm
  • Etch rate 1500 nm/min
  • Roughness < 5
Anisotropic silicon dioxide (SiO2) removal on die

Oxide deprocessing

  • Selectivity vs. mask > 50:1
  • Etch rate 250 nm/min
  • Roughness < 10
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