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FLEXIBILITY
Processing of silicon-based compounds and polymers with multiple etching modes
The unique shuttle (carrier) design, combined with a standard cathode, enable a cost-effective reactor conversion suitable for multiple applications
HIGH PERFORMANCE
Exceptional uniformity, and repeatability enabled with a unique high-power ICP reactor with helical antenna
Wide pressure range offers capability to precisely tune the etch profile
SCALABILITY
Low-risk, cost-effective upgrades extend product capabilities and maximize return on investment[/vc_column_text][vc_empty_space][/vc_column][/vc_row][vc_row][vc_column][vc_custom_heading text=”Related processes” google_fonts=”font_family:Actor:regular|font_style:400 regular:400:normal”][vc_empty_space height=”15px”][vc_column_text]
The Corial 200I offers differentiated technology and application-focused capabilities for the IC failure analysis and the R&D markets:
- Delayering of polymers and silicon-based compounds for sample preparation prior to IC failure analysis
- Capability to etch the wide range of materials used in R&D centers
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Deprocessing for 28 nm technology node
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ILD deprocessing on wafer
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- SiO2 etching
- Etch rate 140 nm/min
- Selectivity vs. metal > 50:1
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Silicon Dioxide (SiO2) RIE etch process
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- Etch rate 45 nm/min
- Etch depth 800 nm
- Uniformity ±3%
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Silicon Nitride (Si3N4) ICP etch process
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- Etch rate 350 nm/min
- Etch depth 500 nm
- Uniformity ±3%
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