Corial Plasma Therm – Corial 200I ICP-RIE etch system

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The Corial 200R is a compact, easy-to-use system for reactive ion etching of silicon-based compounds, metals and polymers…..

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The Corial 200I ICP-RIE system is designed for R&D centers and IC failure analysis labs.

This equipment uses fluorine- and oxygen-based chemistries to provide leading edge etch rates and uniformities for full wafers of up to 200 mm, as well as dies or packaged dies.

Featuring a short pump-down cycle (<3 minutes), rapid reactor clean time (<20 minutes), and shuttle loading direct on the carrier, the Corial 200I guarantees high system uptime.

Key Benefits

FLEXIBILITY

Processing of silicon-based compounds and polymers with multiple etching modes

The unique shuttle (carrier) design, combined with a standard cathode, enable a cost-effective reactor conversion suitable for multiple applications

HIGH PERFORMANCE

Exceptional uniformity, and repeatability enabled with a unique high-power ICP reactor with helical antenna

Wide pressure range offers capability to precisely tune the etch profile

SCALABILITY

Low-risk, cost-effective upgrades extend product capabilities and maximize return on investment

Related processes

Typical materials that can be processed with the Corial 200I ICP-RIE system include:
  • Silicon and silicon-based compounds (SiO2, Si3N4)
  • Polymers: PMMA, Polyimide, BCB, Photoresist
  • Metals: Ti, TiN, TiW, W, Ta, TaN, Ge, Nb, Nbn, Mo
The Corial 200I offers differentiated technology and application-focused capabilities for the IC failure analysis and the R&D markets:
  • Delayering of polymers and silicon-based compounds for sample preparation prior to IC failure analysis
  • Capability to etch the wide range of materials used in R&D centers
Deprocessing for 28 nm technology node

Failure analysis

  • Low-K dielectric etching
  • Etch rate 300 nm/min
  • Selectivity vs. Al/Cu > 50:1
ILD deprocessing on wafer

Failure analysis

  • SiO2 etching
  • Etch rate 140 nm/min
  • Selectivity vs. metal > 50:1
Silicon Dioxide (SiO2) RIE etch process

R&D

  • Etch rate 45 nm/min
  • Etch depth 800 nm
  • Uniformity ±3%
Silicon Nitride (Si3N4) ICP etch process

R&D

  • Etch rate 350 nm/min
  • Etch depth 500 nm
  • Uniformity ±3%
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