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[/vc_column_text][vc_empty_space][/vc_column][/vc_row][vc_row][vc_column][vc_custom_heading text=”Key Benefits” google_fonts=”font_family:Actor:regular|font_style:400 regular:400:normal”][vc_empty_space height=”15px”][vc_column_text]
LOW COST OF OWNERSHIP
Small footprint (0.81 m2) system with rapid substrate loading and unloading
Low maintenance requirements
HIGH PERFORMANCE
Excellent process control enabled by efficient substrate cooling
Excellent etch control and etch rate determination with end-point detection[/vc_column_text][vc_empty_space][/vc_column][/vc_row][vc_row][vc_column][vc_custom_heading text=”Related processes” google_fonts=”font_family:Actor:regular|font_style:400 regular:400:normal”][vc_empty_space height=”15px”][vc_column_text]
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Silicon Nitride (Si3N4) etch with RIE plasma etch technology
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14611″][vc_empty_space height=”10px”][vc_column_text]R&D
- Etch depth 500 nm
- Etch rate > 70 nm/min
- Selectivity vs. Si underlayer > 7
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Tantalum (Ta) etch with RIE plasma etch technology
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14612″][vc_empty_space height=”10px”][vc_column_text]R&D
- Etch profile > 85°
- Etch rate > 90 nm/min
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Metal back sputtering with RIE plasma etch technology
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14613″][vc_empty_space height=”10px”][vc_column_text]R&D
- Selectivity vs. PR mask > 1
- Etch depth 200 nm
- Etch rate > 50 nm/min
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Silicon (Si) etch with RIE plasma etch technology
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14614″][vc_empty_space height=”10px”][vc_column_text]R&D
- Etch depth 500 nm
- Etch rate 120 nm/min
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