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Corial Plasma Therm – Corial 200S RIE etch system


This simple-to-use, manually-loaded RIE system can etch a wide range of materials including silicon, silicon-based compounds, metals, and polymers with fluorinated gases.

The Corial 200S is ideal for R&D and can process substrates from small wafer pieces to full 200 mm wafers, thanks to a large variety of substrate holders.

The RIE reactor of the Corial 200S system can be equipped with a Ni coated liner, which extends time between cleans.

With helium back side cooling of the substrate, high sputter rates can be achieved (> 50 nm/min), while preserving the photoresist mask.

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Small footprint (0.81 m2) system with rapid substrate loading and unloading

Low maintenance requirements


Excellent process control enabled by efficient substrate cooling

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Typical materials that can be processed with the Corial 200S RIE system include:
  • Silicon and silicon-based compounds (SiO2, SiNx, Si)
  • Polymers: Polyimide, BCB, Photoresist
  • Metals: Au, Pt, Fe, Cu, PZT, Ti, TiN, TiW, W, Ta, TaN, Ge, Nb, NbN, Mo

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Silicon Nitride (Si3N4) etch with RIE plasma etch technology

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  • Etch depth 500 nm
  • Etch rate > 70 nm/min
  • Selectivity vs. Si underlayer > 7

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Tantalum (Ta) etch with RIE plasma etch technology

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  • Etch profile > 85°
  • Etch rate > 90 nm/min

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Metal back sputtering with RIE plasma etch technology

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  • Selectivity vs. PR mask > 1
  • Etch depth 200 nm
  • Etch rate > 50 nm/min

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Silicon (Si) etch with RIE plasma etch technology

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  • Etch depth 500 nm
  • Etch rate 120 nm/min


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