Corial Plasma Therm – Corial 200S RIE etch system

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This simple-to-use, manually-loaded RIE system can etch a wide range of materials including silicon, silicon-based compounds, metals, and polymers with fluorinated gases….

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This simple-to-use, manually-loaded RIE system can etch a wide range of materials including silicon, silicon-based compounds, metals, and polymers with fluorinated gases.

The Corial 200S is ideal for R&D and can process substrates from small wafer pieces to full 200 mm wafers, thanks to a large variety of substrate holders.

The RIE reactor of the Corial 200S system can be equipped with a Ni coated liner, which extends time between cleans.

With helium back side cooling of the substrate, high sputter rates can be achieved (> 50 nm/min), while preserving the photoresist mask.

Key Benefits

LOW COST OF OWNERSHIP

Small footprint (0.81 m2) system with rapid substrate loading and unloading

Low maintenance requirements

HIGH PERFORMANCE

Excellent process control enabled by efficient substrate cooling

Excellent etch control and etch rate determination with end-point detection

Related processes

Typical materials that can be processed with the Corial 200S RIE system include:
  • Silicon and silicon-based compounds (SiO2, SiNx, Si)
  • Polymers: Polyimide, BCB, Photoresist
  • Metals: Au, Pt, Fe, Cu, PZT, Ti, TiN, TiW, W, Ta, TaN, Ge, Nb, NbN, Mo
Silicon Nitride (Si3N4) etch with RIE plasma etch technology

R&D

  • Etch depth 500 nm
  • Etch rate > 70 nm/min
  • Selectivity vs. Si underlayer > 7
Tantalum (Ta) etch with RIE plasma etch technology

R&D

  • Etch profile > 85°
  • Etch rate > 90 nm/min
Metal back sputtering with RIE plasma etch technology

R&D

  • Selectivity vs. PR mask > 1
  • Etch depth 200 nm
  • Etch rate > 50 nm/min
Silicon (Si) etch with RIE plasma etch technology

R&D

  • Etch depth 500 nm
  • Etch rate 120 nm/min
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