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PROCESS FLEXIBILITY
RF match box offers a matching range of 100 to 2000 W to accommodate a wide range of materials and customer requirements
Vacuum load lock supports using fluorinated and chlorinated chemistries in the same tool
HIGH ETCH RATE CAPABILITY
Wall temperature > 250°C, ICP max power: 2000 W; RF max power: 1000 W; high efficiency of RF coupling to plasma
Fast and uniform etching: polymers (800 nm/min), diamond (500 nm/min), GaN (1200 nm/min)…
BEST REPEATABILITY
Load lock for stable and repeatable process conditions
New cathode design and efficient helium back side cooling of the shuttle and substrate ensure uniform temperature control (from -50°C) during the etch process
EXCELLENT PARTICLE CONTROL
Retractable ICP liner collects non-volatile species and minimizes process cross-contamination
UNIQUE SHUTTLE HOLDING APPROACH
Our shuttle (carrier) design, combined with a standard cathode, offer a cost-effective and fast reactor conversion, for multiple applications and substrate types
HIGH UPTIME
Reactor with heated walls and retractable liner increases time between cleans and reduces clean time
Typical reactor cleaning time is 30 minutes[/vc_column_text][vc_empty_space][/vc_column][/vc_row][vc_row][vc_column][vc_custom_heading text=”Related processes” google_fonts=”font_family:Actor:regular|font_style:400 regular:400:normal”][vc_empty_space height=”15px”][vc_column_text]
The Corial 210IL can serve a variety of applications in specialty semiconductors markets including:
- Optoelectronics
- MEMS
- Power devices
- Wireless IC
- Advanced Packaging
- Integrated optics
- R&D
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SiO2 Microlenses etch on 150 mm wafer
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14592″][vc_empty_space height=”10px”][vc_column_text]Integrated Optics
- Etch depth 20 µm
- Etch rate 400 nm/min
- Uniformity ±3%
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SiC transistor etch on 100 mm wafer
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14593″][vc_empty_space height=”10px”][vc_column_text]Power devices
- Etch depth 2.5 µm
- Etch rate > 700 nm/min
- Etch profile 87°
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Polyimide etch on 150 mm wafer
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14594″][vc_empty_space height=”10px”][vc_column_text]MEMS
- Selectivity vs. mask > 50:1
- Etch depth 6 µm
- Etch rate 800 nm/min
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Si DRIE using alternated process on 100 mm wafer
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14595″][vc_empty_space height=”10px”][vc_column_text]MEMS
- Etch though the wafer
- Etch rate > 1.5 µm/min
- Selectivity vs. PR mask >150:1
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GaN ISO etch on 100 mm wafer
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14596″][vc_empty_space height=”10px”][vc_column_text]Optoelectronics
- Etch depth 7 µm
- Etch rate 1200 nm/min
- Etch profile > 30°
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PSS etch on 150 mm wafer
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14597″][vc_empty_space height=”10px”][vc_column_text]Optoelectronics
- Uniformity ±2%
- Etch rate 100 nm/min
- Etch profile conical
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Si Atomic Layer Etching (ALE)
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14598″][vc_empty_space height=”10px”][vc_column_text]R&D
- Etch rate 1.675 nm/min
- Atomically smooth surfaces
- High etch selectivity
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Glass etch on 100 mm wafer
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14599″][vc_empty_space height=”10px”][vc_column_text]Advanced Packaging
- Etch depth 80 µm
- Etch rate 0.6 µm/min
- Selectivity vs. Ni mask > 25:1
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