Corial Plasma Therm – Corial 210IL ICP-RIE etch system

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The Corial 210D ICP-CVD system is ideal for R&D centers, and offers a wide range of applications for the specialty semiconductor markets….

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Corial 210IL is designed for R&D and low volume production, and offers a wide range of applications for the specialty semiconductor market.

This etcher is based on CORIAL’s latest generation of inductively coupled plasma reactor. The system features high density plasma, helical antenna, 2 MHz ICP RF generator and quartz liner, enabling high etch rates and excellent uniformities.

Featuring a vacuum load lock, the Corial 210IL ensures stable process conditions and short pumping cycles, and offers the capability to run fluorinated and chlorinated chemistries in the same process recipe.

The Corial 210IL ICP-RIE system can process a wide range of materials including silicon, oxides, nitrides, polymers, metals, III-V & II-VI compound semiconductors, and hard materials.

When equipped with a 2 kW ICP source, the 210IL enables deep reactive ion etching of hard materials as Al2O3, SiC, LiTaO3, sapphire and glass.

With our CORTEX Pulse software, pulsed or time-multiplexed processes can also be applied for Atomic Layer Etching (ALE) and deep silicon etch (DRIE) on our conventional Corial 210IL ICP-RIE system.

Key Benefits

PROCESS FLEXIBILITY

RF match box offers a matching range of 100 to 2000 W to accommodate a wide range of materials and customer requirements

Vacuum load lock supports using fluorinated and chlorinated chemistries in the same tool

HIGH ETCH RATE CAPABILITY

Wall temperature > 250°C, ICP max power: 2000 W; RF max power: 1000 W; high efficiency of RF coupling to plasma

Fast and uniform etching: polymers (800 nm/min), diamond (500 nm/min), GaN (1200 nm/min)…

BEST REPEATABILITY

Load lock for stable and repeatable process conditions

New cathode design and efficient helium back side cooling of the shuttle and substrate ensure uniform temperature control (from -50°C) during the etch process

EXCELLENT PARTICLE CONTROL

Retractable ICP liner collects non-volatile species and minimizes process cross-contamination

UNIQUE SHUTTLE HOLDING APPROACH

Our shuttle (carrier) design, combined with a standard cathode, offer a cost-effective and fast reactor conversion, for multiple applications and substrate types

HIGH UPTIME

Reactor with heated walls and retractable liner increases time between cleans and reduces clean time

Typical reactor cleaning time is 30 minutes

Related processes

Typical materials that can be processed with the Corial 210IL ICP-RIE system include:
  • Silicon
  • Oxides: SiO2, Si3N4
  • Polymers: PMMA, Polyimide, BCB, Photoresist
  • III-V compounds: GaN, AlGaN, InP
  • II-VI compounds: ZnS, CdTe, HgCdTe
  • Metals: Al, Cr, Au, Ni, Fe, Pt, Cu, Ti, TiN, TiW, W, Ta, TaN, Ge, Nb, Nbn, Mo
  • Hard Materials: Al2O3, SiC, LiTaO3, Glasses, Quartz, Sapphire
The Corial 210IL can serve a variety of applications in specialty semiconductors markets including:
  • Optoelectronics
  • MEMS
  • Power devices
  • Wireless IC
  • Advanced Packaging
  • Integrated optics
  • R&D
SiO2 Microlenses etch on 150 mm wafer

Integrated Optics

  • Etch depth 20 µm
  • Etch rate 400 nm/min
  • Uniformity ±3%
SiC transistor etch on 100 mm wafer

Power devices

  • Etch depth 2.5 µm
  • Etch rate > 700 nm/min
  • Etch profile 87°
Polyimide etch on 150 mm wafer

MEMS

  • Selectivity vs. mask > 50:1
  • Etch depth 6 µm
  • Etch rate 800 nm/min
Si DRIE using alternated process on 100 mm wafer

MEMS

  • Etch though the wafer
  • Etch rate > 1.5 µm/min
  • Selectivity vs. PR mask >150:1
GaN ISO etch on 100 mm wafer

Optoelectronics

  • Etch depth 7 µm
  • Etch rate 1200 nm/min
  • Etch profile > 30°
PSS etch on 150 mm wafer

Optoelectronics

  • Uniformity ±2%
  • Etch rate 100 nm/min
  • Etch profile conical
Si Atomic Layer Etching (ALE)

R&D

  • Etch rate 1.675 nm/min
  • Atomically smooth surfaces
  • High etch selectivity
Glass etch on 100 mm wafer

Advanced Packaging

  • Etch depth 80 µm
  • Etch rate 0.6 µm/min
  • Selectivity vs. Ni mask > 25:1
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