[vc_row][vc_column][vc_column_text]
[/vc_column_text][vc_empty_space][/vc_column][/vc_row][vc_row][vc_column][vc_custom_heading text=”Key Benefits” google_fonts=”font_family:Actor:regular|font_style:400 regular:400:normal”][vc_empty_space height=”15px”][vc_column_text]
FLEXIBILITY
Load lock enables using a combination of fluorinated and chlorinated chemistries in the same tool
System can be upgraded from a basic RIE tool to an advanced ICP-RIE system with a vacuum load lock
LOW COST OF OWNERSHIP
Reactor design and retractable liner increase time between cleans and reduce clean time
Unique shuttle (carrier) design, combined with a standard cathode, offer a cost-effective and fast reactor adaptation, suitable for multiple applications and substrate types
HIGH PERFORMANCE
Load lock ensures stable and repeatable process conditions
Optimized helium back side cooling of the substrate for excellent process control[/vc_column_text][vc_empty_space][/vc_column][/vc_row][vc_row][vc_column][vc_custom_heading text=”Related processes” google_fonts=”font_family:Actor:regular|font_style:400 regular:400:normal”][vc_empty_space height=”15px”][vc_column_text]
[/vc_column_text][vc_row_inner][vc_column_inner width=”1/4″][vc_column_text]
Silicon Dioxide (SiO2) etch with RIE plasma technology
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14623″][vc_empty_space height=”10px”][vc_column_text]R&D
- Etch rate 50 nm/min
- Etch profile > 88°
- Uniformity ±2%
[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]
Silicon (Si) etch with RIE plasma etch technology
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14617″][vc_empty_space height=”10px”][vc_column_text]R&D
- Etch depth 500 nm
- Etch rate 120 nm/min
- Etch profile > 85°
[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]
Tantalum (Ta) etch with RIE plasma technology
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14612″][vc_empty_space height=”10px”][vc_column_text]R&D
- Etch profile > 85°
- Etch rate > 90 nm/min
[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]
Al/Cu etch with RIE plasma technology
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14624″][vc_empty_space height=”10px”][vc_column_text]R&D
- Etch rate 130 nm/min
- Etch profile > 85°
[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row]
