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Corial Plasma Therm – Corial 210RL RIE etch system


The Corial 210RL offers a flexible solution for reactive ion etching of wafer pieces, or up to full 200 mm wafers.

Designed with a vacuum load-lock, the Corial 210RL provides RIE capabilities over a variety of materials including silicon, silicon compounds, polymers, III-V and II-VI compound semiconductors, and metals.

With a small footprint, and a modular design approach supporting tiered upgrades, this etch tool is ideal for R&D centers.

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Load lock enables using a combination of fluorinated and chlorinated chemistries in the same tool

System can be upgraded from a basic RIE tool to an advanced ICP-RIE system with a vacuum load lock


Reactor design and retractable liner increase time between cleans and reduce clean time

Unique shuttle (carrier) design, combined with a standard cathode, offer a cost-effective and fast reactor adaptation, suitable for multiple applications and substrate types


Load lock ensures stable and repeatable process conditions

Optimized helium back side cooling of the substrate for excellent process control[/vc_column_text][vc_empty_space][/vc_column][/vc_row][vc_row][vc_column][vc_custom_heading text=”Related processes” google_fonts=”font_family:Actor:regular|font_style:400 regular:400:normal”][vc_empty_space height=”15px”][vc_column_text]

Our extensive process library for the Corial 210RL etcher supports a wide range of materials.

The Corial 210RL uses fluorinated reactive gases for Si, SiO2, Si3N4, Ge, W, Ta, TaN, Ti, TiN, TiW, Nb, NbN, Mo and polymer etching. To structure materials such as GaN, AlGaN, GaAs, InP and metals as Al, Cr, Ti, this RIE etcher uses CH4/H2 and chlorinated reactive gases.

R&D is the main market served by the Corial 210RL.

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Silicon Dioxide (SiO2) etch with RIE plasma technology

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  • Etch rate 50 nm/min
  • Etch profile > 88°
  • Uniformity ±2%

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Silicon (Si) etch with RIE plasma etch technology

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  • Etch depth 500 nm
  • Etch rate 120 nm/min
  • Etch profile > 85°

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Tantalum (Ta) etch with RIE plasma technology

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  • Etch profile > 85°
  • Etch rate > 90 nm/min

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Al/Cu etch with RIE plasma technology

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  • Etch rate 130 nm/min
  • Etch profile > 85°


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