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Corial Plasma Therm – Corial 300S RIE etch system

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With chrome and quartz etch capabilities, the Corial 300S RIE system is ideal for mask repair. This product can process mask sizes from 2” x 2” up to 8” x 8”, thanks to a wide array of substrate holders.

The Corial 300S design includes a large cathode that facilitates substrate loading, and enables high chromium etch rates together with high selectivity to the PR. The substrate holders are simply clamped on the cathode without the need for screws or fasteners.

This simple-to-use, manually-loaded batch RIE system can etch a wide range of materials required for MEMS device manufacturing, including silicon, silicon compounds, metals, and polymers, using fluorinated gases. The tool accommodates batch sizes of 7 X 4” or 3 X 6” wafers.

The Corial 300S system can be upgraded with the next generation RIE process chamber, designed for etching and/or thin film sputtering, with any type of substrate up to 300 mm diameter.

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LOW COST OF OWNERSHIP

Cost-effective mask repair technology

Small (0.81 m2) footprint system with fast substrate loading and unloading

Retractable liner reduces cleaning requirements

BEST REPEATABILITY

Optimized helium backside cooling results in excellent process and wafer temperature control, and greater flexibility to process a wide range of materials

HIGH ETCH RATE CAPABILITY

Fast RIE rates: Cr (50 nm/min), SiO2 (50 nm/min), Si3N4 (60 nm/min) and polymers (400 nm/min)

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Typical materials that can be processed with the Corial 300S RIE system include:
  • Chrome and quartz for photomask repair
  • Silicon and silicon-based compounds (SiO2, SiNx, Si)
  • Polymers: Polyimide, BCB, Photoresist
  • Metals: Au, Pt, Fe, Cu, PZT, Ti, TiN, TiW, W, Ta, TaN, Ge, Nb, NbN, Mo

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Chrome (Cr) etch with RIE plasma etch technology

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Photomask

  • Selectivity vs. quartz > 20:1
  • Etch rate 50 nm/min
  • Uniformity < ± 3%

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Silicon Dioxide (SiO2) RIE etch

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  • Etch depth 800 nm
  • Etch profile 88°
  • Etch rate 50 nm/min

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Metal back sputtering with RIE plasma etch technology

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  • Selectivity vs. PR mask > 1:1
  • Etch depth 200 nm
  • Etch rate > 50 nm/min

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Silicon Nitride (Si3N4) sacrificial layer RIE etch

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  • Etch depth 500 nm
  • Etch rate > 70 nm/min
  • Selectivity vs. Si > 7:1

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