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PROCESS FLEXIBILITY
The RF match box operating range (from 100 W to 2000 W) supports a wide range of customer applications
The vacuum load lock enables using a combination of fluorinated and chlorinated chemistries in the same tool
HIGH ETCH RATE CAPABILITY
Large area cathode facilitates substrate loading and results in high etch rates of III-V compounds and chrome
Fast RIE rates: Cr (50 nm/min), SiO2 (50 nm/min), and Si3N4 (60 nm/min)
Fast RIE sputter-etch rate of metals: (50 nm/min)
LOW COST OF OWNERSHIP
Cost-effective mask repair technology
Pumping system optimized for corrosive environment decreases maintenance requirement
BEST REPEATABILITY
Optimized helium backside cooling results in excellent process and wafer temperature control, and greater flexibility to process a wide range of materials
Vacuum load lock for stable and repeatable process conditions[/vc_column_text][vc_empty_space][/vc_column][/vc_row][vc_row][vc_column][vc_custom_heading text=”Related processes” google_fonts=”font_family:Actor:regular|font_style:400 regular:400:normal”][vc_empty_space height=”15px”][vc_column_text]
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Chrome (Cr) etch with RIE etch
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Silicon Dioxide (SiO2) RIE etch
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- Etch depth 800 nm
- Etch profile 88°
- Etch rate 50 nm/min
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Highly selective GaAs etch
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- Selectivity vs. PR mask > 6:1
- Etch depth 1 µm
- Etch rate 300 nm/min
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Anisotropic GaN etch process
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- Uniformity ±5
- Etch rate 200 nm/min
- Selectivity vs. SiO2 mask > 5:1
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