Key Benefits
BEST REPRODUCIBILITY
Precise and uniform temperature control of the substrate and reactor walls delivers excellent deposition repeatability and uniformity
The pressurized, symmetrically-pumped reactor ensures high-quality films free of pinholes.
HIGH DEPOSITION RATES
With an isothermal and pressurized reactor, the Corial D250 delivers uniform, high deposition rates on wafer sizes up to 200 mm
Typical deposition rates: 520 nm/min for SiO2, 250 nm/min for Si3N4, 150 nm/min for SiOCH, 100 nm/min for SiC
PROCESS FLEXIBILITY
CORTEX™ Pulse software-controlled pulsing of any process parameters improves control of film properties and enables Atomic Layer Deposition (ALD) in the Corial D250 deposition system
INCREASED UPTIME
The Corial D250 high temperature, dual pumped configuration enables efficient plasma cleaning at operating temperature, with no corrosion of mechanical parts
No manual cleaning of reactor or vacuum vessel required for many years of operation
Related processes
Typical materials that can be processed with the Corial D250 PECVD system include:
- Silicon-based compounds : SiO2, Si3N4, SiOCH, SiOF, aSi-H
- Hard materials: SiC
The Corial D250 can serve a variety of applications in specialty semiconductors markets including:
- Optoelectronics
- MEMS
- Power devices
- Wireless Communication
- Integrated optics
Silicon Dioxide (SiO2) PECVD deposition process for step coverage
MEMS
- Deposition rate 16 nm/min
- Refractive index 1.475
- Stress -250 ± 50 MPa
Fluorinated Silicon Oxide (SiOF) PECVD deposition process for step coverage
Wireless Communication
- Deposition rate 65 nm/min
- Refractive index 1.41
- Stress -30 ± 50 MPa
Stress-less Silicon Nitride (Si3N4) PECVD deposition process
MEMS
- Deposition rate 120 nm/min
- Stress -10 ± 50 MPa
- Deposition at 280°C
Silicon Dioxide (SiO2) layer deposition for passivation application
Optoelectronics
- Deposition rate 270 nm/min
- Refractive index 1.46
- RF power 230 W
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