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[/vc_column_text][vc_empty_space][/vc_column][/vc_row][vc_row][vc_column][vc_custom_heading text=”Key Benefits” google_fonts=”font_family:Actor:regular|font_style:400 regular:400:normal”][vc_empty_space height=”15px”][vc_column_text]
BEST REPRODUCIBILITY
Precise and uniform temperature control of the substrate and reactor walls delivers excellent deposition repeatability and uniformity
The pressurized, symmetrically-pumped reactor ensures high-quality films free of pinholes
HIGH DEPOSITION RATES
With an isothermal and pressurized reactor, the Corial D250L delivers uniform, high deposition rates on wafer sizes up to 200 mm
Typical deposition rates: 520 nm/min for SiO2, 250 nm/min for Si3N4, 150 nm/min for SiOCH, 100 nm/min for SiC
PROCESS FLEXIBILITY
CORTEX™ Pulse software-controlled pulsing of any process parameters improves control of film properties and enables Atomic Layer Deposition (ALD) in the Corial D250L deposition system
INCREASED UPTIME
Load-lock ensures fast loading/unloading and short pump down times
No manual cleaning of reactor or vacuum vessel required for many years of operation[/vc_column_text][vc_empty_space][/vc_column][/vc_row][vc_row][vc_column][vc_custom_heading text=”Related processes” google_fonts=”font_family:Actor:regular|font_style:400 regular:400:normal”][vc_empty_space height=”15px”][vc_column_text]Typical materials that can be processed with the Corial D250L PECVD system include:
- Silicon-based compounds : SiO2, Si3N4, SiOCH, SiOF, aSi-H
- Hard materials: SiC
The Corial D250L can serve a variety of applications in specialty semiconductors markets including:
- Optoelectronics
- MEMS
- Power devices
- Wireless Communication
- Integrated optics
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Silicon Nitride (Si3N4) PECVD deposition process with tensile stress
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14577″][vc_empty_space height=”10px”][vc_column_text]MEMS
- Deposition rate 210 nm/min
- Refractive index 2.00
- Stress 130 ± 50 MPa
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High temperature Silicon Dioxide (SiO2) layer deposition for passivation
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14581″][vc_empty_space height=”10px”][vc_column_text]R&D
- Deposition at 320°C
- Refractive index 1.46
- Stress -190 ± 50 MPa
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Stress-less Silicon Nitride (Si3N4) PECVD deposition process
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14577″][vc_empty_space height=”10px”][vc_column_text]MEMS
- Deposition rate 120 nm/min
- Stress -10 ± 50 MPa
- Deposition at 280°C
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Silicon Dioxide (SiO2) layer deposition for passivation application
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14578″][vc_empty_space height=”10px”][vc_column_text]Optoelectronics
- Deposition rate 270 nm/min
- Refractive index 1.46
- RF power 230 W
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