Corial Plasma Therm – Corial D350 PECVD system
The Corial D350 PECVD system is designed to produce high-quality, uniform films for photonics, optoelectronics, and MEMS device manufacturing….
Key Benefits
EXCELLENT UNIFORMITY
Precise and uniform temperature control of the substrate and reactor walls delivers excellent deposition repeatability and uniformity
The pressurized, symmetrically-pumped reactor ensures high-quality films free of pinholes.
HIGH DEPOSITION RATES
With its isothermal, pressurized reactor, the Corial D350 rapidly deposits uniform films on wafers up to 300 mm in diameter
Typical performance: SiO2: >500 nm/min; Si3N4: 250 nm/min; SiOCH: 150 nm/min; SiC: 100 nm/min
CONTROL OF FILM PROPERTIES
Film stress control is simple to achieve, thanks to the reactor’s symmetrical design
The Corial D350 heating system enables precise control and optimization of refractive index and wet chemical etch rate
INCREASED UPTIME
The Corial D350 high temperature, dual pumped configuration enables efficient plasma cleaning at operating temperature, with no corrosion of mechanical parts
No manual cleaning of reactor or vacuum vessel required for many years of operation
Related processes
PECVD of Silicon Nitride (Si3N4) film with tensile stress
MEMS
- Deposition rate 50 nm/min
- Refractive index 1.91
- Stress 220 ± 50
Stress-less deposition of Silicon Nitride (Si3N4) film
MEMS
- Deposition rate 75 nm/min
- Refractive index 1.91
- Stress 0 ± 50 MPa
PECVD of Silicon Nitride (Si3N4) film with compressive stress
MEMS
- Deposition rate 75 nm/min
- Refractive index 1.91
- Stress -180 ± 50 MPa
PECVD of Silicon Nitride (Si3N4) film for photodiode passivation
Optoelectronics
- Deposition rate 20 nm/min
- Refractive index 2.02
- RF power 50 W
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