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EXCELLENT UNIFORMITY
Precise and uniform temperature control of the substrate and reactor walls delivers excellent deposition repeatability and uniformity
The pressurized, symmetrically-pumped reactor ensures high-quality films free of pinholes
HIGH DEPOSITION RATES
With its isothermal, pressurized reactor, the Corial D350L rapidly deposits uniform films on wafers up to 300 mm in diameter
Typical performance: SiO2: >500 nm/min; Si3N4: 250 nm/min; SiOCH: 150 nm/min; SiC: 100 nm/min
CONTROL OF FILM PROPERTIES
Film stress control is simple to achieve, thanks to the reactor’s symmetrical design
The Corial D350L heating system enables precise control and optimization of refractive index and wet chemical etch rate
INCREASED UPTIME
The Corial D350L high temperature, dual pumped configuration enables efficient plasma cleaning at operating temperature, with no corrosion of mechanical parts
No manual cleaning of reactor and vacuum vessel required for many years of operation
Load lock ensures fast loading/unloading and short pump-down times[/vc_column_text][vc_empty_space][/vc_column][/vc_row][vc_row][vc_column][vc_custom_heading text=”Related processes” google_fonts=”font_family:Actor:regular|font_style:400 regular:400:normal”][vc_empty_space height=”15px”][vc_column_text]
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PECVD of Silicon Nitride (Si3N4) film with tensile stress
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14577″][vc_empty_space height=”10px”][vc_column_text]MEMS
- Deposition rate 50 nm/min
- Refractive index 1.91
- Stress 220 ± 50
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Stress-less deposition of Silicon Nitride (Si3N4) film
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14577″][vc_empty_space height=”10px”][vc_column_text]MEMS
- Deposition rate 75 nm/min
- Refractive index 1.91
- Stress 0 ± 50 MPa
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PECVD of Silicon Nitride (Si3N4) film with compressive stress
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14577″][vc_empty_space height=”10px”][vc_column_text]MEMS
- Deposition rate 75 nm/min
- Refractive index 1.91
- Stress -180 ± 50 MPa
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PECVD of Silicon Nitride (Si3N4) film for photodiode passivation
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14584″][vc_empty_space height=”10px”][vc_column_text]Optoelectronics
- Deposition rate 20 nm/min
- Refractive index 2.02
- RF power 50 W
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