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EXCELLENT UNIFORMITY
Precise and uniform temperature control of the substrate and reactor walls delivers excellent deposition repeatability and uniformity
The pressurized, symmetrically-pumped reactor ensures high-quality films free of pinholes
HIGH DEPOSITION RATES
With its isothermal, pressurized reactor, the Corial D500 rapidly deposits uniform films on wafers up to 300 mm in diameter
Typical deposition rates: 320 nm/min for SiO2, 250 nm/min for Si3N4, 150 nm/min for SiOCH
LOW TEMPERATURE DEPOSITION
Default PECVD chamber supports film deposition from 120°C up to 325°C
Optional low-temperature chamber enables high-quality, low-damage film deposition at substrate temperatures as low as 20°C
INCREASED UPTIME
The Corial D500’s high temperature reactor walls and dual-pumped system enable efficient plasma cleaning at operating temperature, with no corrosion of mechanical parts
No manual cleaning of reactor and vacuum vessel required for many years of operation[/vc_column_text][vc_empty_space][/vc_column][/vc_row][vc_row][vc_column][vc_custom_heading text=”Related processes” google_fonts=”font_family:Actor:regular|font_style:400 regular:400:normal”][vc_empty_space height=”15px”][vc_column_text]
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Silicon Nitride (Si3N4) PECVD deposition process with low RF
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- Deposition rate 20 nm/min
- Refractive index 2.00
- RF power 80 W
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Fast Silicon Dioxide (SiO2) PECVD deposition process
[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14577″][vc_empty_space height=”10px”][vc_column_text]Optoelectronics
- Deposition rate 110 nm/min
- Refractive index 1.68
- BOE < 650 nm/min
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Silicon Carbide (SiC) deposition process at low temperature
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- Deposition temperature 80°C
- Refractive index 3.00
- Tensile stress 125 ± 50 MPa
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Silicon Carbide (SiC) deposition process at low temperature
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- Deposition temperature 80°C
- Refractive index 2.91
- Stress 10 ± 50 MPa
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