Logo - Eden Lab

Corial Plasma Therm – Corial D500 PECVD system


The Corial D500 PECVD system is designed to produce high quality, uniform films for power semiconductor devices, optoelectronics, and MEMS device manufacturing.

The PECVD deposition chamber is based on Corial’s unique reactor design. It houses an isothermal, pressurized plasma reactor located inside a vacuum vessel to enable efficient in situ plasma cleaning.

The combination of an optimized RF-powered showerhead with a dual-pumped system enables the deposition of dielectric films at high rates, while maintaining excellent film thickness uniformity.

The Corial D500 PECVD system offers high capacity batch deposition processing (104 X 2”, 25 X 4”, 9 X 6”, or 4 X 8”) for a wide range of materials at high temperatures (up to 325°C), including SiO2, Si3N4, SiOCH, SiOF, SiC and aSi-H films.

The PECVD tool can also be equipped with a chiller-based temperature management system. This option provides the capability to control substrate temperature from 50°C up to 150°C, with highly uniform temperature of substrate (±1 °C).

[/vc_column_text][vc_empty_space][/vc_column][/vc_row][vc_row][vc_column][vc_custom_heading text=”Key Benefits” google_fonts=”font_family:Actor:regular|font_style:400 regular:400:normal”][vc_empty_space height=”15px”][vc_column_text]


Precise and uniform temperature control of the substrate and reactor walls delivers excellent deposition repeatability and uniformity

The pressurized, symmetrically-pumped reactor ensures high-quality films free of pinholes


With its isothermal, pressurized reactor, the Corial D500 rapidly deposits uniform films on wafers up to 300 mm in diameter

Typical deposition rates: 320 nm/min for SiO2, 250 nm/min for Si3N4, 150 nm/min for SiOCH


Default PECVD chamber supports film deposition from 120°C up to 325°C

Optional low-temperature chamber enables high-quality, low-damage film deposition at substrate temperatures as low as 20°C


The Corial D500’s high temperature reactor walls and dual-pumped system enable efficient plasma cleaning at operating temperature, with no corrosion of mechanical parts

No manual cleaning of reactor and vacuum vessel required for many years of operation[/vc_column_text][vc_empty_space][/vc_column][/vc_row][vc_row][vc_column][vc_custom_heading text=”Related processes” google_fonts=”font_family:Actor:regular|font_style:400 regular:400:normal”][vc_empty_space height=”15px”][vc_column_text]

Typical materials deposited with the Corial D500 PECVD system include silicon-based compounds such as SiO2, Si3N4, SiOCH, SiOF, and aSi-H.

The Corial D500 is specifically designed for volume production of films for power semiconductor, optoelectronics, and MEMS markets.

[/vc_column_text][vc_row_inner][vc_column_inner width=”1/4″][vc_column_text]

Silicon Nitride (Si3N4) PECVD deposition process with low RF

[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14589″][vc_empty_space height=”10px”][vc_column_text]MEMS

  • Deposition rate 20 nm/min
  • Refractive index 2.00
  • RF power 80 W

[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]

Fast Silicon Dioxide (SiO2) PECVD deposition process

[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14577″][vc_empty_space height=”10px”][vc_column_text]Optoelectronics

  • Deposition rate 110 nm/min
  • Refractive index 1.68
  • BOE < 650 nm/min

[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]

Silicon Carbide (SiC) deposition process at low temperature

[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14590″][vc_empty_space height=”10px”][vc_column_text]Optoelectronics

  • Deposition temperature 80°C
  • Refractive index 3.00
  • Tensile stress 125 ± 50 MPa

[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]

Silicon Carbide (SiC) deposition process at low temperature

[/vc_column_text][vc_empty_space height=”10px”][vc_single_image image=”14590″][vc_empty_space height=”10px”][vc_column_text]Power devices

  • Deposition temperature 80°C
  • Refractive index 2.91
  • Stress 10 ± 50 MPa


Why Choose Eden Lab

Australian Company
Top Support
Full Spectrum of Products
Years of Experience

Fast Shipping

Ready to Ship Freeze Dryers

Top Support

Local Dedicated Support

Peace of Mind

Covered By Australian Law