[vc_row][vc_column][vc_column_text]Plasma-Therm’s KOBUS product line offers a dedicated solution for single wafer deposition utilizing F.A.S.T. and PECVD technologies for both R&D and production customers.
Fast Atomic Sequential Technology (F.A.S.T.®)
Based on proprietary CVD reactor design, combined with pulsed capability, F.A.S.T.® is optimal for thick and conformal layer deposition and offers new solutions for 3D integration challenges.
At the crossroads of CVD and ALD deposition techniques, F.A.S.T.® delivers:
- Unique film properties
- Best in class solution for thick and conformal layers
- ALD film performance at CVD speed
Click here for more information about F.A.S.T. technology.
PECVD Technology
Plasma-Therm has also developed mature deposition solutions:
- KOBUS Silane
– Oxide/nitride/oxynitride/a-Si/µc-Si/a-SiC (doped and undoped)
– From thick to very thin (µm’s to 10’s nm)
– Easily tunable (stress, RI, dielectric characteristics)
– Plasma used for clean and pre-treatment and post-treatment
– Optional RPS cleaning system (based on NF3/Ar)
- KOBUS TEOS
– Oxide (doped and un-doped)
– Doped layer for conformal film/buffer application
– Direct liquid injection for precursors (without bubbling)
– Plasma used for clean and pre-treatment and post-treatment
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