Plasma-Therm’s QuaZar Planetary IBE incorporate a unique feature of planetary scanning technology – the ability to sweep the wafer in a oscillatory manner across the ion beam.
This unique feature of Planetary wafer scanning technology results in:
- Extreme uniformity control independent of wafer tilt angle (< 0.6% 3σ, 0° to -80° tilt)
- Symmetric junctions middle-to-edge
- Low temperature (<50°C)
- Remote Plasma – neutral beam
- Low damage
The QuaZar™ Planetary IBE system can also be configured with one or two process chambers. The second chamber can be added in the field, for increased capacity.
QuaZar Planetary IBE Features
- Plasma-Therm proprietary IBE source
- Wafer Rotation, Tilt and Sweep
- SEMI S2-S8, CE compliant
- High Speed Motion Control
- SIMS End Point Detection Option
QuaZar Planetary IBE Benefits
- High Productivity: Uptime
- Extreme Uniformity
- Feature symmetry control
- Feature Symmetry Center-to-Edge
- Radial Etch Profiling
- Flatten non-uniform films
- Contour films concave, convex or bulls-eye
- Radial Profile Shaping
- Surface Smoothing
- Etch Almost any Material
- Up to 200mm
- Low Damage Remote Plasma
- Flexible tool – 2nd chamber can be added in the field
- High Throughput (in-chamber Low motion overhead)
