PLASMA THERM – VERSALINE® ICP

Plasma-Therm’s VERSALINE ICP is the product resulting from decades of technological evolution. Well-known and accepted product lines including the 790, Shuttlelock, and Versalock all played a role in the development of the VERSALINE ICP.

Hardware

• Flexible and upgradeable handling
  – LL — single substrate or batch carrier loader
  – CX — cassette-to-cassette loading of wafers or carriers
• Loading configurations for single and multiple wafers
• 2 MHz ICP RF for efficient coupling of power to the plasma
• ICP source with temperature control capable of high power
• Substrate temperature control via mechanical clamp or ESC
• Efficient thermal management with monoblock electrode construction and an active backside helium circuit
• Flexible substrate bias options with 13.56 MHz and 40MHz
• Improved preventative maintenance cycles with thermally managed chamber liner and pump train
• Digital MFCs with filtered and bypassed gas lines
• Available substrate electrode temperature ranges –40ºC to 180ºC
• Chambers with corrosion-resistant surfaces
• Mag-Lev turbo pump
• Bulkhead or ballroom installation

Endpoint options

Integrated multifunctional endpoint capability with EndpointWorks^®:

• Laser interferometry
• Optical emission spectroscopy (OES)
• Optical emission interferemetry (OEI)
• System parameters (throttle valve position, pressure, forward power, etc.)
• Custom inputs such as RGA and ellipsometer

Control system

Cortex^® control system provides a user-friendly control interface designed for efficiency and productivity. Cortex benefits include:

• Graphical, touchscreen compatible, SEMI-standard (E-95) interface
• Comprehensive process parameter charting (real-time and post-processing)
• Automated clean and prep (ACAP) routines with configurable triggers, including RF-on time, job count, and wafer count
• Real-time process data display
• Factory automation host interface (with optional SECS/GEM license)
• Integrated recipe editor with step and tabular views
• Per-user access control for menus, screens, commands and recipes
• Auto logging of alarms, jobs, calibration, and resource usage
• Integrated with GLANCE data logging and visualization tool

Process

• Optimized etch rates
• High uniformity
• Low particulates
• Tunable selectivity
• Multilayer etch detection
• Profile control
• Large library of processes for electronic, photonic, MEMS, and nanotechnology applications (material specs available upon request)
  • II-VIs and III-Vs: e.g. GaAs, InP, GaN, AlN, CdTe, InSb
  • Silicon based: e.g. Si, Ge, SiGe, poly-Si, SiC, SiO₂, SiNx, quartz
  • Polymers: e.g. PR, PI, BCB
  • Metals: e.g. Al, Cr, V, W, Mo, Ti, Ta, Nb, Cu, Au, Pt
  • Metal oxides and nitrides: e.g. TiN, TaN, TiOx, TaOx
  • Piezoelectrics: e.g. LiNbO₃, LiTaO₃
• Corrosive chemistry (e.g. HBr, Cl₂, BCl₃)  supported with “armored” internal component